| PART |
Description |
Maker |
| W988D2FBJX6E W988D2FBJX6I W988D2FBJX7E W988D2FBJX7 |
256Mb Mobile LPSDR
|
Winbond
|
| W987D6HB W987D6HBGX6E W987D6HBGX6I W987D6HBGX7G W9 |
128Mb Mobile LPSDR
|
Winbond
|
| W987D6CKJX5G W947D6CKJX5G W989D6CKJX5G W949D6CKJX5 |
512Mb Mobile LPSDR
512Mb Mobile LPSDR
|
Winbond
|
| M65KA128AE |
Low Power SDRAM
|
STMicroelectronics
|
| EM669325BG-8G EM669325BG-7.5G EM669325 EM669325BG- |
4M x 32 Low Power SDRAM (LPSDRAM)
|
ETRON[Etron Technology, Inc.]
|
| RMLD232UAW-7E |
2M x 32 bit Low Power DDR SDRAM
|
Emerging Memory & Logic Solutions Inc
|
| CMS6416LAX-75XX |
64M(4Mx16) Low Power SDRAM
|
FIDELIX
|
| EP7312-IV-C EP7311-IV-C EP7311-EB-C EP7311-IB-C EP |
GT 3C 3#16S PIN PLUG 高性能，低功率系统，片上内存和增强的数字音频接
HIGH-PERFORMANCE, LOW-POWER SYSTEM-ON-CHIP WITH SDRAM AND ENHANCED DIGITAL AUDIO INTERFACE 32-BIT, 74 MHz, RISC MICROCONTROLLER, PQFP208
HIGH-PERFORMANCE, LOW-POWER SYSTEM-ON-CHIP WITH SDRAM AND ENHANCED DIGITAL AUDIO INTERFACE 高性能，低功率系统，片上内存和增强的数字音频接
|
Cirrus Logic, Inc.
|
| M65KG512AB6W9 M65KG512AB M65KG512AB6W8 M65KG512AB8 |
512Mbit (4 banks x 8 Mb x 16) 1.8 V supply, DDR low power SDRAM
|
STMicroelectronics
|
| V55C2128164VB V55C2128164VT V55C2128164V |
128Mbit LOW-POWER SDRAM 2.5 VOLT, TSOP II / BGA PACKAGE 8M X 16
|
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
|
| K4S640832 K4S640832F K4S640832F-TL75 K4S640832F-TC |
Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC 0 to 70
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
IC,SDRAM,4X2MX8,CMOS,TSOP,54PIN,PLASTIC
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronics Inc
|
